11n60 transistor datasheet booklet

Ka7812 datasheet 3terminal 1a positive voltage regulator. It is intented for use in medium power linear and switching. Packaged into a tsfp4 package, this transistor is easytouse for the designs. Datasheet catalog for electronic components integrated. This product has ultrafast igbt vces 600v functions. Tip32 tip32a tip32c pnp epitaxial silicon transistor mouser. Free devices maximum ratings rating symbol value unit collector. Transfer characteristics i d a 20 25 30 35 40 45 50 0 4 8 12 16 20. Since the first application manual for igbt and mosfet power modules was published, these. Aod454 nchannel enhancement mode field effect transistor. Ssp2n60bsss2n60b ssp2n60bsss2n60b 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar, dmos technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Mdf11n60 datasheet 600v, 11a, nch mosfet magnachip, mdf11n60 pdf, mdf11n60 pinout, mdf11n60 equivalent, mdf11n60 schematic, mdf11n60 manual.

Pc25wtc25 applications with general purpose applications pinning pin description 1base 2 collector 3 emitter. The ka78xxka78xxa series of threeterminal positive regulator. Germanium glass diode 1n601n60p taitron components. Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors page 1636. Nchannel silicon power mosfet, 11n60e pdf download fuji electric, 11n60e datasheet pdf, pinouts, data sheet, equivalent, schematic, cross reference, obsolete, circuits electronic component search and free download site. Rd01mus1 silicon mosfet power transistor 520mhz,1w outline drawing description 4. A wide variety of electronic transistor ka7812 options are available to you, there are 27 suppliers who sells electronic transistor ka7812 on, mainly located in asia. G80n60 datasheet vces 660v, ultrafast igbt fairchild.

Aot11n60laotf11n60laotf11n60 600v,11a nchannel mosfet general description product summary v ds id at v gs 10v 11a r dson at v gs 10v, ltd 3 of 8 tw qwr502170. Emitter voltage 2n6515 2n6517, 2n6520 vceo 250 350 vdc collector. Germanium diodes 1 cold bonded germanium diodes in do7 package mm type aa1 aa117 aa118 aa119 aa8 aa143 aa144 aaz15 aaz17 aaz18 oa47 oa79 oa90 oa91 oa95 oa99 1n34a 1n38a 1n60a 1n100a 1n27q 1n276 1n277 1n695 1n695a 1n933 1n949 1n3287 1n3592 1n3666 1n3773 peak inverse voltage min. Toshiba field effect transistor silicon n channel mos type. Piv volts 65 90 90 45 25 30 100 100 75 40 25 40 30.

This advanced technology has been tailored to minimize. But11a emitterbase voltage collector current dc collector current pulse base current dc. Spw24n60c3coolmostm power transistorfeatures new revolutionary high voltage technology ultra low gate charge periodic avalanche rated extreme dv dt rated ultra low effective capacitances improved transconductance datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. The tip32c is a silicon epitaxialbase pnp power transistor in jedec to220 plastic package. Part number top mark package reel size tape width quantity fqp5n60c fqp5n60c to220 na na 50 units packing method tube fqpf5n60c fqpf5n60c to220f tube na na 50 units notes. Base voltage 2n6515 2n6517, 2n6520 vcbo 250 350 vdc. S7059mdsr60s portable minidisc recorder mdsr60s model in the interests of usersafety the set should be restored to its original condition and only parts identical to those specified be used.

Mosfet process that is designed to deliver high levels of performance and robustness in popular ac. Datasheet search engine for electronic components and semiconductors. Datasheet 2a, 600v, nchannel power mosfet srm2n60 general description symbol the sanrise srm2n60 is a high voltage power mosfet, which has better characteristics, such as fast switching time, low gate charge, low on state resistance. Below are the operating specifications of common npn transistors note that these specifications vary according to different manufacturers. Fcpf11n60 mosfet nchan 600v 11a to220f fairchild semiconductor datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Mdf11n60 datasheet 600v, 11a, nch mosfet magnachip. Silicon npn power transistors 2sd2058 description with to220f package complement to type 2sb66 low collector saturation voltage. Patented tetrafet rf mosfets outperform the competition, are higher gain and broader band. If you have any questions related to the data sheet, please contact our nearest. D1021 rf mosfet transistor point nine technologies, inc. Bfp740 lna in wlan wimax rf transceiver 60ghz transistor wlan transceiver an189 c166 text. Fcp11n60fcpf11n60 tm fcp11n60fcpf11n60 general description superfettm is a new generation of high voltage mosfets from fairchild with outstanding low onresistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. Thermal characteristicsthermal resistance, junction caser thjc datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Transistor gain given hfe is only an approximate value.